Figure 3. The reconfigurable short-term and long-term ion dynamics with different ranges of stimulus at the gate terminal. a) The rise of drain current (ΔId) induced by a chain of ten consecutive pulses, with amplitude ranging from 1 V to 5 V, which shows the conductance change changing from short term to long term. ΔId triggered by pulses of different widths b) and amplitudes c) were also conducted to evaluate the short-term ion dynamics in the ion-modulated memtransistors. d) PPF index as a double-exponential decay function of the interval between two pulses, and the red line revealed the fitting results. e) Drain current concerning different pulse frequencies from 1 Hz to 25 Hz, illustrating that the higher stimuli generate more prominent channel current enhancement. To explore the long-term ion dynamics, the relationship between the final drain current of the number f) or considerable amplitude g) of applied pulses is shown. h) Retention performance of eight states of the memtransistor was recorded for 100 seconds. The relative change of conductance is defined as the difference between the initial conductance and final conductance of the device concerning the initial conductance. i) To test the conductance maintenance capacity in longer time scales, two of the many states were selected to perform that. j) Fifty distinguished states were picked to show the analog characteristic of ion-modulated memtransistor. k) Analog states update in both potentiation and depression is shown with 50 pulses of 8 V and -6 V, in which widths were both set at 100 ms. Data are collected from 10 cycles of the LTP and LTD updates.